REACTOR FOR TREATMENT OF SUBSTRATES IN PLASMA OF MICROWAVE GLOWING DISCHARGE Russian patent published in 1997 - IPC

Abstract RU 2073933 C1

FIELD: microelectronics. SUBSTANCE: device is designed as vacuum chamber, in which hollow resonator cavity, stage, units for power supply, agents feeding and waste removal are located. Two flanges are located in resonator cavity at half-wave distance from power input point. One flange carries stage, another one is located in opposite and has complex shape recess. EFFECT: increased functional capabilities. 1 dwg

Similar patents RU2073933C1

Title	Year	Author	Number
REACTOR FOR PROCESSING SUBSTRATES IN MICROWAVE GLOW-DISCHARGE PLASMA	1992	Neustroev S.A.	RU2070349C1
ELECTRON-CYCLOTRON RESONANCE OF DISCHARGE PLASMA SOURCE	1993	Vanin A.A. Zotov S.V. Kremerov M.A. Malinov A.Ju.	RU2070357C1
METHOD FOR PRODUCTING THIN FILMS OF AMORPHOUS HYDROGENATED SILICON	1993	Ajvazov A.A. Budagjan B.G. Sazonov A.Ju. Prikhod'Ko E.L.	RU2061281C1
MANUFACTURING PROCESS FOR DOUBLE-LEVEL METALLIZED LARGE-SCALE INTEGRATED CIRCUITS	1991	Krasnozhon A.I. Frolov V.V. Khvorov L.I.	RU2022407C1
REACTOR FOR PLASMA TREATMENT OF SEMICONDUCTOR STRUCTURES	1998	Golishnikov A.A. Zarjankin N.M. Putrja M.G. Saurov A.N.	RU2133998C1
PROCESS OF MANUFACTURE OF TWO-LEVEL COATING	1991	Medvedev N.M. Khvorov L.I.	RU2025825C1
METHOD OF PLASMA ETCHING OF ALUMINIUM	1991	Grushetskij S.V. Dostanko A.P.	SU1829774A1
AUTOMATED GAS-PHASE GROWTH UNIT	1998	Barkhotkin A.V. Rajnova Ju.P.	RU2143155C1
PROCESS OF MANUFACTURE OF HIGH-TEMPERATURE SUPERCONDUCTING FILMS	1991	Grigorashvili Ju.E. Sotnikov I.L. Fomin A.A.	SU1829818A1
METHOD FOR PRODUCING PROTECTIVE COATING IN GAS-DISCHARGE DEVICE	1998	Kim S.G.	RU2140113C1

RU 2 073 933 C1

Authors

Neustroev S.A.

Dates

1997-02-20—Published

1993-03-02—Filed