METHOD FOR DEPOSITING FILMS BASED ON SILICON OXIDE Russian patent published in 1995 - IPC

FIELD: electronic industry. SUBSTANCE: gas flow containing organosilicon compounds is delivered into plasma where reaction in the plasma of the discharge ensures deposition of silicon oxide on backing at a pressure below 100 microns. The organosilicon compound is preferably combined with oxygen and helium, part of plasma being held near the backing by noncompensated magnetron system. Films produced by this method can be applied to small and large backings, e.g. glass, plastic, minerals or metals with preset properties. EFFECT: wider technological capabilities. 9 cl, 7 dwg, 5 tbl