METHOD OF SEPARATION OF SINGLE-CRYSTAL INGOTS INTO LAMINATIONS Russian patent published in 1995 - IPC

FIELD: electronics. SUBSTANCE: after first lamination is cut from ingot disturbed layer is removed from it with mechanical and chemical polishing on both sides. Direction with maximum hardness is found on side formed with second cut by scratching along crystallographic directions. Lateral feed of ingot to disc is performed then along this direction. For determination of hardness scratching is conducted with velocity equal to that of feed of ingot to disc. EFFECT: facilitated process of manufacture of semiconductor substrate. 2 cl, 3 tbl