FIELD: microelectronics; flaw inspection of semiconductor plates. SUBSTANCE: method involves mechanical grinding and chemical polishing of plate side under check, measurement of structure-sensitive parameter of material, and irradiation of plate with light-weight particles at energy of 0.5-5 MeV until parameter under check changes; plate side other that under check is irradiated and before doing so it is mechanically ground or polished, and structurally disturbed layer is formed, its thickness being not less than path length of introduced particles; post-irradiation variations in parameter under measurement serve as indications of plate structure quality. EFFECT: improved sensitivity of method.
