FIELD: semiconductor devices. SUBSTANCE: method involves reduction of concentration of structural defects and background impurities in near-surface area; to this end, working side of single-crystalline silicon plate is covered with germanium monoxide in the form of film, 1.0-2.5 mcm thick, structure is annealed for 3-5 h at 700-800 K, and then film is removed by chemical etching. EFFECT: improved uniformity of distribution of electrophysical characteristics of substrates along their working side. 3 dwg, 1 tbl
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