PROCESS OF PREPARATION OF SURFACE OF SILICON PLATE Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: invention is meant for manufacture of substrates from monocrystalline silicon to fabricate discrete semiconductor devices or integrated circuits from them. Process includes cutting of ingot plates, chemical etching and chemical and mechanical polishing, formation of layer of porous silicon on working side of plate by anode treatment in solution of hydrochloric acid which thickness 2-5 times exceeds depth of layer disturbed by chemical and mechanical polishing, chemical and dynamic polishing in solution of potassium or sodium hydroxide to depth 1.5-2 times greater than thickness of layer of porous silicon. EFFECT: reduced density of defects and impurities in surface layers of silicon substrates, increased output of good plates. 1 dwg, 2 tbl