FIELD: air pollution control. SUBSTANCE: when fabricating sensitive member for hydrogen-containing gas sensor based on porous silicon, ionic implantation of palladium with energy 30-100 keV into porous silicon filter is performed. EFFECT: increased sensitivity.
Title | Year | Author | Number |
---|---|---|---|
METHOD OF MAKING IONISING RADIATION SENSOR | 2014 |
|
RU2575939C1 |
METHOD FOR GENERATION OF FILM JUMPERS FROM HIGH- TEMPERATURE SUPERCONDUCTORS | 1992 |
|
RU2080693C1 |
METHOD OF PRODUCING POROUS SILICON | 2014 |
|
RU2547515C1 |
METHOD OF PRODUCING INTERLAYER INSULATION IN PRODUCTION OF INTEGRAL MICROCIRCUITS | 0 |
|
SU1711269A1 |
METHOD FOR PRODUCING PERFECT EPITAXIAL SILICON LAYERS WITH BURIED n- LAYERS | 2003 |
|
RU2265912C2 |
PROCESS OF MANUFACTURE OF FILM MEMBRANES | 1991 |
|
RU2032277C1 |
METHOD TO MAKE HIGH VOLTAGE SILICON-CARBIDE DIODE BASED ON ION-DOPED P-N-STRUCTURES | 2013 |
|
RU2528554C1 |
PROCESS OF MANUFACTURE OF SILICON EPITAXIAL STRUCTURES WITH INTERNAL GETTER | 1990 |
|
SU1797403A1 |
METHOD OF MAKING OHMIC CONTACTS IN THIN-FILM DEVICES ON AMORPHOUS UNDOPED SEMICONDUCTORS | 2009 |
|
RU2392688C1 |
METHOD FOR MANUFACTURING OF SILICON-ON-INSULATOR STRUCTURE | 2008 |
|
RU2368034C1 |
Authors
Dates
1997-01-27—Published
1992-11-24—Filed