CRYOTRON BASED ON ANISOTROPIC MONOCRYSTAL Russian patent published in 1995 - IPC

Abstract RU 2035092 C1

FIELD: semiconductor devices. SUBSTANCE: cryotron based on anisotropic monocrystal of metal-oxide superconductor has contacts of valve circuit closing current through direction with minimal value of critical parameters of superconductor and contacts of control circuit closing current through path with maximum value of critical parameters. It is proposed to place at least one more pair of contacts of control circuit on monocrystal to expand its operational capabilities for usage in logic circuits. EFFECT: expanded operational capabilities. 1 dwg

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RU 2 035 092 C1

Authors

Volkov A.Ju.

Gordeev S.N.

Bush A.A.

Dates

1995-05-10Published

1991-06-14Filed