PROCESS OF MANUFACTURE OF THIN-FILM TRANSISTORS Russian patent published in 1995 - IPC

Abstract RU 2035800 C1

FIELD: electronic equipment. SUBSTANCE: thin-film resistors based on a-Si: H are intended for use in the capacity of switching elements in liquid-crystal matrix screens. They are subjected to ultra-violet radiation with energy 3-5 eV and dose 10¹⁸-10¹⁹ cm^-2 region close to surface of film is formed in which Fermi level is located farther from conductance zone than in region of channel. EFFECT: increased stability and reliability, improved operational characteristics. 7 dwg

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RU 2 035 800 C1

Authors

Voronkov Eh.N.

Kazurov B.I.

Popov I.A.

Chernorotov B.P.

Ogurtsov O.F.

Dates

1995-05-20—Published

1992-04-13—Filed