LIGHT-EMITTING DEVICE Russian patent published in 2009 - IPC H01L27/32 

Abstract RU 2358354 C2

FIELD: electricity.

SUBSTANCE: in accordance with the invention concept the proposed light-emitting device contains a light-emitting element with the first and the second electrodes and a light-emitting layer positioned between the first and the second electrodes, a field transistor for the light-emitting element excitation whose effective layer is composed of an amorphous oxide with an electronic media concentration less than 1018/cm3. Additionally proposed are two versions of the light-emitting device design, an electrophotographic device, an active matrix display device and a product for display.

EFFECT: development of devices whose electrophysical properties ensure high contrast with display devices as may be equipped with the light-emitting device under consideration in accordance with the invention concept.

26 cl, 15 dwg

Similar patents RU2358354C2

Title Year Author Number
FIELD TRANSISTOR 2005
  • Sano Masafumi
  • Nakagava Katsumi
  • Khosono Khideo
  • Kamija Tosio
  • Nomura Kendzi
RU2358355C2
AMORPHOUS OXIDE AND FIELD TRANSISTOR USING IT 2008
  • Sano Masafumi
  • Nakagava Katsumi
  • Khosono Khideo
  • Kamija Tosio
  • Nomura Kendzi
RU2402106C2
AMORPHOUS OXIDE AND FIELD-EFFECT TRANSISTOR USING SAID OXIDE 2008
  • Sano Masafumi
  • Nakagava Katsumi
  • Khosono Khideo
  • Kamija Tosio
  • Nomura Kendzi
RU2399989C2
FIELD-EFFECT TRANSISTOR USING OXIDE FILM TO TRANSMIT INFORMATION AND PREPARATION METHOD THEREOF 2007
  • Ivasaki Tatsuja
  • Kumomi Khideja
RU2400865C2
FIELD-EFFECT TRANSISTOR AND METHOD OF MANUFACTURING A FIELD-EFFECT TRANSISTOR 2014
  • Matsumoto Sindzi
  • Ueda Naoyuki
  • Nakamura Yuki
  • Takada Mikiko
  • Sone Yudzi
  • Saotome Rioiti
  • Arae Sadanori
  • Abe Yukiko
RU2631405C2
FIELD TRANSISTOR 2006
  • Aiba Tosiaki
  • Sano Masafumi
  • Kadzi Nobujuki
RU2390072C2
P-TYPE OXIDE SEMICONDUCTOR, COMPOSITION FOR PRODUCING P-TYPE OXIDE SEMICONDUCTOR, METHOD FOR PRODUCING R-TYPE OXIDE SEMICONDUCTOR, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM 2014
  • Abe Yukiko
  • Ueda Naoyuki
  • Nakamura Yuki
  • Matsumoto Sindzi
  • Sone Yudzi
  • Saotome Rioiti
  • Arae Sadanori
RU2660407C2
METHOD OF MANUFACTURING OF INVERTER AND INVERTER 2008
  • Ofudzi Masato
  • Abe Katsumi
  • Khajasi Rio
  • Sano Masafumi
  • Kumomi Khideja
RU2433504C2
FIELD TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE AND SYSTEM 2017
  • Ueda, Naoyuki
  • Nakamura, Yuki
  • Abe, Yukiko
  • Matsumoto, Shinji
  • Sone, Yuji
  • Saotome, Ryoichi
  • Arae, Sadanori
  • Kusayanagi, Minehide
RU2702802C1
P-TYPE OXIDE, PRODUCING P-TYPE OXIDE COMPOSITION, METHOD OF PRODUCING P-TYPE OXIDE, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, IMAGE REPRODUCING APPARATUS AND SYSTEM 2012
  • Abe Jukiko
  • Ueda Naojuki
  • Nakamura Juki
  • Matsumoto Sindzi
  • Sone Judzi
  • Takada Mikiko
  • Saotome Rioiti
RU2556102C2

RU 2 358 354 C2

Authors

Den Toru

Ivasaki Tatsuja

Khosono Khideo

Kamija Tosio

Nomura Kendzi

Dates

2009-06-10Published

2005-11-09Filed