METHOD FOR PRODUCING OHMIC CONTACTS IN THIN-FILM DEVICES BUILT AROUND AMORPHOUS HYDROGENATED SEMICONDUCTORS Russian patent published in 2004 - IPC

FIELD: electronic engineering and microelectronics. SUBSTANCE: proposed method intended to produce ohmic contacts in thin-film field-effect transistors, memory items, Schottky-barrier solar cells, and other pieces of equipment built around amorphous hydrogenated silicon, then a-Si:H, or other hydrogenated amorphous semiconductors is characterized in that operations involved in doping contact film using toxic and explosive gases phosphine and diborane are eliminated and replaced by film annealing prior to coating it with masking insulation and metal electrodes. Semiconductor film is annealed at temperature of hydrogen effusion from film surface within 20 to 30 minutes. EFFECT: reduced toxicity and explosion hazard of process; facilitated procedure. 1 cl, 2 dwg