METHOD FOR INCREASING EFFICIENCY OF DOPING AND CHANGING CONDUCTIVITY TYPE OF AMORPHOUS HYDROGENATED SILICON SLIGHTLY DOPED WITH ACCEPTOR IMPURITIES Russian patent published in 2018 - IPC H01L21/225 

FIELD: optoelectronic engineering.

SUBSTANCE: invention relates to optoelectronic engineering and can be used to create solar cells, as well as other thin-film electronic devices based on boron-doped amorphous hydrogenated silicon films. Method for changing the type of conductivity and increasing the efficiency of boron doping of amorphous hydrogenated silicon includes preparation by the method of plasmochemical decomposition of a mixture of monosilane (SiH₄) and diborane (B₂H₆) of thin films of amorphous hydrogenated silicon slightly doped with boron (volume ratio [B₂H₆]/[SiH₄]=(10^-6-10^-5), and treatment of films by femtosecond laser pulses with a central wavelength of radiation of 1000–1100 nm, frequency of repetition of laser pulses 50–500 kHz, pulse duration 100–500 fs and laser pulse energy density 150–200 mJ/cm².

EFFECT: technical result is increase in the efficiency of doping with boron in amorphous hydrogenated silicon and a change in the conductivity type of amorphous hydrogenated silicon due to the increase in electrically active boron atoms in amorphous hydrogenated silicon.

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