VOLTAGE-TO-FREQUENCY CONVERTER Russian patent published in 1995 - IPC

FIELD: electrical and radio engineering. SUBSTANCE: voltage-to-frequency converter is manufactured in the form of multilayer structure composed of semiconductor substrate 1, dielectric layer 4, gate 5 and ground 7 metal electrodes. Semiconductor substrate carries high-resistance semiconductor layer 3 with opposite type of conductance which thickness does not exceed diffusion length of its minority carriers. Two low-resistance regions 2 of same type of conductance placed at distance not more than five diffusion lengthes of minority carriers are formed in high-resistance layer 3. Gate metal electrode 5 is located on dielectric layer 4 arranged on high-resistance semiconductor layer 3 between contact metal electrodes 6 positioned in low-resistance regions 2. High resistance semiconductor layer 3 includes deep and shallow dopes of opposite signs. Ratio of concentration of minority and majority carriers is greater than ratio of lifes of shortlived and long-lived charge carriers. EFFECT: enhanced operational stability and reliability. 5 cl, 1 dwg