PLANAR CHANGE-OVER SEMICONDUCTOR DEVICE Russian patent published in 1996 - IPC

FIELD: semiconductor electronics; semiconductor change-over thyristor devices. SUBSTANCE: planar change-over semiconductor device has low-resistance substrate with high-resistance epitaxial layer on its surface wherein there are p-n-p and multicollector n-p-n transistors; base region of n-p-n transistor also functions as collector region of p-n-p transistor and emitter region of n-p-n transistor, as base region of p-n-p transistor; collector regions of n-p-n transistors are combined by common electrode cathode, its emitter regions are isolated from zero potential bus by insulation passivating layer formed on rear side of low-resistance substrate; emitter region of p-n-p transistor is formed on periphery of change-over device structure and covers emitter region of n-p-n transistor; its electrode functions as anode and electrode of n-p-n transistor base; p-n-p transistor collector is control electrode. EFFECT: improved design. 1 dwg, 1 tbl