SHF TRANSISTOR MICROASSEMBLY Russian patent published in 1998 - IPC

FIELD: semiconductor microelectronics. SUBSTANCE: SHF transistor microassembly includes first semiconductor crystal with transistor structures, second semiconductor crystal with MIS capacitor and built-in resistor and family of wire jumpers connecting termination pads of active elements of transistor structures, upper plate of MIS capacitor, electrodes of built-in resistor and electrodes of shell. Additional high-resistance layer of conductance type identical to that of substrate and having thickness 5-20 μm and specific resistance 0.1-5.0 ohm\cm is formed in second crystal between low-resistance surface layer and substrate. Specific resistance of monocrystalline substrate in this case should not exceed 0.01 ohm\cm. EFFECT: increased output parameters in band of working frequencies due to diminished losses in input matching circuit. 1 cl, 2 dwg , 1 tbl