GAS DETECTOR Russian patent published in 1995 - IPC

FIELD: chemical engineering; measurement technology. SUBSTANCE: device has semiconductor plate which one side is covered with dielectric layer and adsorbing metal layer having the first electrode, the other electrode being on the other side of the plate. The dielectric layer is distributed over the peripheral part of the plate, the rest of the plate is covered with tunnel-thin dielectric layer. The semiconductor plate has high-resistance area of the same conductivity type with the plate, the area being under the dielectric layers. Electrode is positioned in the peripheral part over the dielectric layer. EFFECT: enhanced effectiveness in determining the presence of various gases. 8 cl, 1 dwg