MATERIAL FOR THIN-FILM RESISTORS Russian patent published in 1995 - IPC

Abstract RU 2036521 C1

FIELD: radio engineering. SUBSTANCE: material that was known before has chrome, iron, aluminum, silicon dioxide and alundum. In addition material has titan. These components have following specific weights: 3-28 percents of chrome, 6-14 percents of iron, 9-13 percents of aluminum, 30-52 percents of silicon dioxide, 10-14 percents of titan, all remained material is alundum. This material is designed for high-resistance films which resistance is 1-30 KO with output of 70- 80 percents of working films according to temperature coefficient of resistance ± 50·10-6. EFFECT: increased functional capabilities. 1 tbl

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RU 2 036 521 C1

Authors

Rjakhin Vladimir Fedorovich

Dates

1995-05-27Published

1993-02-15Filed