MATERIAL FOR PRODUCTION OF THIN-FILM RESISTORS Russian patent published in 2008 - IPC H01C7/00 

FIELD: radio engineering.

SUBSTANCE: invention is related to radio engineering and may be used in production of thin-film resistors with precision characteristics. Material for production of thin-film resistors contains chrome, iron, aluminium, silicon dioxide. It additionally contains aluminium oxide at the following quantitative ratio of components, wt %: chrome - 33÷45; iron - 8.0÷9.6; aluminium - 6.9÷8.4; silicon dioxide - 29.4÷35.9; titanium - 8.9÷10.8; aluminium oxide - 1.9÷2.3. Resistive material provides production of thin-film resistors with specific surface resistance from 100 Ohm to 400 Ohm and temperature coefficient of resistance (TKS)±5×10^-6 1/°C with yield of proper resistors of 60-80%, and by TKS±10×10^-6 1/°C with yield of proper resistors of 95-100% in every produced batch in range of temperatures from 20 to 125°C, and in range of temperatures from -60 to +20°C it has more linear dependence of TKS on temperature, which is equal to ±10-15×10^-6 1/°C with stability for 2000 hours at nominal load of 0.01% at 85°C.

EFFECT: improved characteristics of thin-film resistors.

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