MATERIAL OR MAKING THIN-FILM RESISTORS Russian patent published in 2008 - IPC H01C7/00 

FIELD: physics.

SUBSTANCE: material for making thin-film resistors contains chrome, iron, aluminium, silicon dioxide, titanium, with the following quantitative ratios of the components, in wt %: chrome - 46-56; iron - 3; aluminium - 9; silicon dioxide - 20-30; titanium - 12. The material for making thin-film resistors provides for obtaining low resistance thin-film resistors with high-precision properties with surface resistivity ranging from 20 to 170 ohms with 60-80% yield ratio of resistors with temperature coefficient of resistance of ±5×10^-6 1/°C, and 99-100% yield ratio of resistors with temperature coefficient of resistance of ±10×10^-6 1/°C, at temperature ranging from +20 to +125°C, with stability for a period of 2000 hours with nominal load of 0.005% at 85°C. There is also a more linear dependence of the temperature coefficient of resistance on temperature in the -60 to +20°C (temperature coefficient of resistance ±15-25×10^-6 1/°C) temperature range.

EFFECT: obtaining low resistance thin-film resistors with high-precision properties.

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