MATERIAL FOR MANUFACTURING THIN-FILM RESISTORS AND METHOD FOR PRODUCING RESISTIVE FILM AROUND IT Russian patent published in 2008 - IPC H01C7/00 

FIELD: radio engineering; producing high-rating thin-film resistors of precision characteristics.

SUBSTANCE: material used for manufacturing thin-film resistors rated at 15-17 kΩ has in its composition chromium, iron, aluminum, silicon dioxide, titanium, and alundum, proportion of ingredients being as follows, mass percent: chromium, 10-24; iron, 2-8; aluminum, 11-17; silicon dioxide, 41-57, titanium, 7-8; alundum, 713. Proposed method for producing resistive film includes preparation of mixture of material components, application of film onto ceramic bases by sublimation from mixture in vacuum using evaporator for the purpose, followed by heat treatment; novelty is that film is settled down in two steps; during first stem current through evaporator is raised to 45 A within 10 s, held at this value for 30 s, then, during second step, it is raised to 64 A within 60 s, held at this value for 30 s, whereupon blank carrying settled-down film is calcined in vacuum while raising current through evaporator to 52 A within 60 s which is held at this value for 60 s; this is followed by thermal stabilization at 190-260 °C for one or two hours, exposure to surrounding atmosphere for 24 h followed by heat treatment at 400-620 °C. Yield of thin-film resistors with respect to temperature coefficient of resistance of ±25-50 x 10^-61/ °C is minimum 70-80%.

EFFECT: enhanced quality and yield of high-rating resistors.

2 cl, 2 tbl