MATERIAL FOR PRODUCTION OF THIN-FILM RESISTORS Russian patent published in 2008 - IPC H01C17/00 

FIELD: electric engineering.

SUBSTANCE: material for production of thin-film resistors contains chrome, iron, aluminium, silica dioxide, titanium and aluminium oxide (alundum) is characterised with the fact that it additionally contains magnesium oxide and cerium oxide at the following quantitative ratio of components, wt %: chrome - 5-9; iron - 10.5-15; aluminium - 7-9; silica dioxide - 38-48; titanium - 21.4-27; aluminium oxide (alundum) - 1-2.6; magnesium oxide - 0.5-3; cerium oxide - 1-4. Resistive material provides production of high-resistance precision thin-film resistors with temperature coefficient of resistance (TKS) ±15×10^-6 1/°C with linear dependence of TKS from temperature in the range from +20 to +125°C, and TKS±15-25×10^-6 1/°C in the range of temperatures from -60 to +20°C.

EFFECT: provides for production of high-resistance precision thin-film resistors.

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