MATERIAL FOR MANUFACTURING OF THIN-FILM RESISTORS Russian patent published in 2009 - IPC H01C7/00 

FIELD: electric engineering.

SUBSTANCE: invention is related to the field of electric engineering, in particular to material and manufacturing of thin-film resistors with precision characteristics from it. Material for manufacturing of thin-film resistors contains chrome, iron, aluminium, silicon dioxide, aluminium oxide, nickel and cerium dioxide at the following quantitative ratio of components, in wt %: chrome - 11÷31, iron - 7.5÷11.2, aluminium - 4.3÷9.8, silicon dioxide -17.5÷41.7, titanium - 5.6÷12.6, aluminium oxide - 1.2÷2.7, nickel - 3.2÷17.6, cerium dioxide - 0.6÷1.3.

EFFECT: additional introduction of aluminium oxide, nickel and cerium dioxide provides for production of thin-film resistors with specific surface resistance from 400 Ohm to 1000 Ohm and TRC (temperature resistance coefficient) ± 15×10^-6 degrees^-1 with good resistors yield of 100%, and at TRC of ± 10×10^-6 1/°C with yield of good resistors of 90-100% in each manufactured batch in range of temperatures from 20 to 125°C, and in range of temperatures from -60 to +20°C it has more linear dependence of TRC on temperature, equal to ±10-15×10^-6 degrees^-1 with stability of ±0,01% for 2000 hours at rated load at ambient air temperature of 85°C.

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