RESISTIVE MATERIAL FOR MANUFACTURING OF THIN-FILM RESISTORS Russian patent published in 2009 - IPC H01C7/00 

FIELD: electric engineering.

SUBSTANCE: invention is related to the field of electric engineering and may be used in manufacturing of thin-film resistors with precision characteristics. Material contains chrome, iron, aluminium, silicon dioxide, titanium, aluminium oxide, nickel and cerium dioxide at the following quantitative ratio of components, in wt %: chrome - 11÷31, iron - 7.5÷11.2, aluminium - 4.3÷9.8, silicon dioxide -17.5÷41.7, titanium - 5.6÷12.6, aluminium oxide - 1.2÷2.7, nickel - 3.2÷17.6, cerium dioxide - 0.6÷1.3. Additional introduction of nickel and cerium dioxide in specified amount into resistive material provides for production of thin-film resistors with specific surface resistance from 1000 Ohm to 5000 Ohm and TRC (temperature resistance coefficient) ± 15×10^-6 degrees^-1 with higher percentage of good resistors yield up to 80-100 in the range of temperatures from 20 to 125°C.

EFFECT: in range of temperatures from -60 to +20°C resistors have higher linear dependence of TRC on temperature, equal to ±25×10^-6 degrees^-1 with stability of ±0,05% for 2000 hours at rated load at ambient air temperature of 85°C.

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