FIELD: microelectronics. SUBSTANCE: compound of arsenic with metals in form of granules is filled into reaction column through which carrier gas (e.g., hydrogen) is passed. Carrier gas is preliminary saturated with steam in thermostat with moistening vessel. Carrier gas is saturated with steam up to concentration corresponding to equilibrium state. Concentration of arsenic hydride in mixture with carrier gas is preset by concentration of saturated steam. EFFECT: higher efficiency. 5 cl, 1 dwg
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