METHOD OF PREPARING MONOSILANE Russian patent published in 1997 - IPC

FIELD: production of silicon compounds. SUBSTANCE: invention has relation to production of high- purity polycrystalline silicon and semiconductor structures by gas epitaxy technique. Calcium hydride interacts with gaseous 50-100% silicon tetrafluoride (mixed with oxygen-free nitrogen) in lithium and potassium chloride salt melt, silicon tetrafluoride being taken in 2 wt % excess to its stoichiometrically required amount. Thus obtained monosilane is subjected to additional purification by adsorption on granular sodium fluoride in two steps: at 130-140 and then at 250-280 C. Purity of product is 99.998-99.999%. EFFECT: increased purity of product. 3 cl, 2 tbl