METHOD OF OBTAINING THIN SELF-SUPPORTING FILMS Russian patent published in 1995 - IPC

FIELD: production of thin films. SUBSTANCE: method involves chemical cleaning of glass substrate; cleaning glass substrate in glow discharge under vacuum level of (1,33-2,66)·10^-1 Pa at voltage of 1-3 kV for 3-5 min; effectuating deposition of layer of sodium chloride and beryllium or silicium, or germanium, or manganese, or erbium of bismuth onto substrate; with evaporation of above-mentioned materials being conducted in pulsed mode at evaporator temperature of 1923-2100 K, 1850-1900 K, 1600-1650 K, 1325-1550 K, 1803-1833 K, 820-930 K, respectively. Pulse time and pulse interval are maintained equal to 3-4 and 8-10 sec; 8-10 and 20-25 sec; 5-6 and 2-5 sec; 1-2 and 5-6 sec; 3-4 and 6-8 sec; 3-4 and 8-10 sec, respectively. Above-mentioned materials are deposited at the rate of 2.0-9.57 mcg/cm² sec; 2.0-3.78 mcg/cm² sec; 14.0-29.05 mcg/cm² sec; 8.0-16.33 mcg/cm² sec; 3.0-3.86 mcg/cm² sec; 10-22.3 mcg/cm² sec. respectively. EFFECT: increased efficiency and high quality of films. 2 cl