HETEROSTRUCTURE MANUFACTURING PROCESS Russian patent published in 2005 - IPC

FIELD: semiconductor engineering; integration of electronic materials in semiconductor, electronic, superconductor, optical, and electrical technologies.

SUBSTANCE: proposed heterostructure manufacturing process that provides for manufacturing crystal films of homogeneous thickness, 10 to 300 nm thick, on amorphous insulator, semiconductor material, and other substrates, including flexible ones, at surface roughness of film about 0.2 - 0.5 nm involves introduction of hydrogen in working wafer, chemical treatment of the latter, joining of working wafer and substrate, splicing and exfoliation of working wafer including transfer of film to heterostructure. Formed in working wafer prior to hydrogen introduction is buried interface to display layer in wafer transferred as film to heterostructure or buried interface with delta-doped layer of impurity or thin layer in the form of impurity compounds also displaying layer in working wafer is formed and transferred as film to heterostructure; upon chemical treatment working wafer and substrate are dried out, then adsorbed substances are removed from and adhesive layer applied to them, working wafer and substrate are spliced and exfoliated with film transferred to heterostructure at temperature keeping hydrogen introduced in working wafer inside its space and affording hydrogen accumulation on buried interface or on delta-doped buried interface, or in the form of impurity compounds, hydrogen being introduced in working wafer through depth greater than or of same order of magnitude as burial depth of buried interface or delta-doped buried interface, or in the form of thin layer of dope compounds.

EFFECT: improved morphology of film transferred to heterostructure.

23 cl, 4 dwg