ANALOG-DIGITAL BASE MATRIX CRYSTAL Russian patent published in 1995 - IPC

FIELD: microelectronics. SUBSTANCE: analog-digital base matrix crystal includes substrate, bipolar transistors, valves of integral injection logic, resistors forming isolated analog and digital parts, input and output cells, capacitors and p-channel field-effect transistors with gates in the form of p-n junction. Analog part is manufactured in the form of matrix of cells arranged in symmetry relative to longitudinal axis of crystal along its short side. Each cell is surrounded by set of resistors. Bipolar transistors and capacitors are located between termination pads. Input and output cells are placed in symmetry with reference to longitudinal axis of crystal around three sides of digital part. Bipolar transistor and resistors in these cells are positioned between termination pads. Field-effect transistor is put behind each of them. Field-effect transistor, p-m-p transistors and resistors are located between digital part and region of termination pads. EFFECT: facilitated manufacture, improved operational reliability. 3 cl, 6 dwg