FIELD-EFFECT TRANSISTOR Russian patent published in 1996 - IPC

FIELD: cryotronics at creation of superconductive integrated circuits. SUBSTANCE: field-effect transistor uses a single-crystal substrate, channel of super- conductive material, layer of dielectric material, two buffer layers, additional dielectric layer and a gate. The buffer layers are made of material with a crystal lattice similar to the lattice of the channel material, and have a normal nature of conduction. The buffer layers are located on both side of the channel; each layer of dielectric material is positioned on the buffer layer; the additional gate is made of superconductive material and positioned between the substrate and additional dielectric layer. EFFECT: enhanced reliability. 1 dwg