PROCESS OF MANUFACTURE OF PHOTOSENSITIVE STRUCTURE BASED ON COMPOUNDS OF A 992B-996 TYPE Russian patent published in 1995 - IPC

FIELD: optoelectronics. SUBSTANCE: process of manufacture of photosensitive structure lies in successive thermal deposition of ZnSe layer and CdTe layers 0.5-2.0 μm thick and layers of (ZnTe)_1-y(In₂Te₃)_y 1.0-5.0 μm thick on glass substrate with clear electrode heated to temperature 150-200 C with subsequent firing in vacuum at temperature 500-550 C for the course of 2-20 min. ZnSe layer is deposited with thickness 0.05-0.10 μm with density of incident flow equal to 10¹⁵-10¹⁶ cm^-2 s^-1. EFFECT: facilitated manufacture, improved operational photosensitivity. 1 tbl