FIELD: physics.
SUBSTANCE: method of obtaining photosensitive structure containing a plate of p-type monocrystal silicon with n-type front layer and p-n heterojunction involves joint heating of p-type monocrystal silicon substrate covered with target material, and synthesis of front layer with heterojunction. Target material is a solid porous carbonaceous material with porosity under 15% of volume, previously undergone thermal processing in contact with silicon at 1100-1350°C for 10-20 minutes; the synthesis is conducted at 1100-1250°C; a gap between carbonaceous material and p-type monocrystal silicon plate is not more than 8 micron.
EFFECT: allows obtaining heterostructure with high photosensitivity in the short-wave spectre range.
2 cl, 1 tbl, 8 dwg
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