METHOD OF MAKING PULSE PHOTODETECTOR Russian patent published in 2018 - IPC H01L31/18 

FIELD: instrument engineering.

SUBSTANCE: invention relates to development and manufacture of photosensitive semiconductor devices based on GaAs. Method of manufacturing high-power pulsed photodetector operating in photovoltaic mode (with zero bias voltage), based on GaAs includes sequential growth by liquid phase epitaxy on an n-GaAs substrate of a n-Al_xGa_1-xAs layer at x=0.10–0.15, i-GaAs layer, p-GaAs layer and p-Al_xGa_1-xAs layer at x=0.2–0.3 at the beginning of growth and at x=0.09–0.16 in the near-surface region of the layer.

EFFECT: invention ensures possibility of creating GaAs-based pulsed photodetector operating in photovoltaic mode (without bias), with reduced capacity, increased speed and photosensitivity, and thereby increasing the efficiency of conversion of pulses of high-power laser radiation modulated in gigahertz frequency range.

5 cl, 4 dwg, 2 ex