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2 062 527

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C1

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IPC

(21) (22)

Application

5057616/25, 1992-08-03

(22)

Actual filing date

1992-08-03

(45)

Published

1996-06-20

(72)

Inventor

Kremarenko A.A.Lovjagin R.N.Ovsjuk V.N.

(73)

Holder

Institut Fiziki Poluprovodnikov So Ran

PROCESS OF MANUFACTURE OF N-P JUNCTIONS IN MONOCRYSTALS CD XHG OO1 OO-OOXTE Russian patent published in 1996 - IPC

Abstract RU 2062527 C1

FIELD: manufacture of photodetectors of 1R radiation. SUBSTANCE: indium foil is put on starting crystals of CdHgl-x.Te with X 0.190-.250 of p type of conductance, obtained sandwich is placed into closed volume filled with deionized water. Then volume is heated up to temperature 220-245 C and annealed at same temperature for the course of 500-1000 s. EFFECT: facilitated manufacture and improved quality. 1 dwg, 2 tbl

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RU 2 062 527 C1

Authors

Kremarenko A.A.

Lovjagin R.N.

Ovsjuk V.N.

Dates

1996-06-20—Published

1992-08-03—Filed

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