METHOD FOR PRODUCING LIGHT-ABSORBING MATRIX Russian patent published in 1995 - IPC

FIELD: electronic engineering. SUBSTANCE: photoresistive three-layer structure composed of chalcogenide glass, metal iodide, and silver is sequentially deposited on substrate in vacuum. Photoresistive structure is exposed through shadow mask, developed in alkaline solution, light-absorbing material (chromium and silicon monoxide base sintered metal) is deposited in vacuum, then coating is opened at points of photoresist location. During deposition of three-layer structure, GeS₂ layer, 600 to 1000 mm thick, is deposited first, then silver iodide, 1 to 3 mm thick, and finally, silver layer, 5 to 10 mm thick. Structure is developed in aqueous solution of KOH at concentration of 0.15 to 0.20 mass percent. EFFECT: enlarged functional capabilities. 5 dwg, 5 tbl