METHOD OF MANUFACTURING PHOTOCONVERTER WITH BUILT-IN DIODE ON GERMANIC SUBSTRATE Russian patent published in 2018 - IPC H01L31/04 H02S50/10 

FIELD: instrument engineering.

SUBSTANCE: invention relates to the field of construction and manufacturing technology of optoelectronic devices, namely to methods of manufacturing photoconverters on a germanium substrate. Method of manufacturing a photoconverter with an integrated diode on a germanium substrate consists in creating a three-cascade photoresist mask on the germanium substrate with grown epitaxial layers with the windows under the face contacts of the photoconverter and the built-in diode, etching the diode pad, spraying the metallization layers based on silver, erasion of the photoresist, the creation of a photoresist mask with a window under the mesa-etching, etching of mesa with the simultaneous erasion of epitaxial outgrowths on the back side of the germanium substrate, deposition of layers of rear metallization on the basis of silver, annealing of contacts, opening the optical window by etching, spraying an antireflection coating containing layers of TiO₂ and Al₂O₃, electron-beam method, separation of the epitaxial structure, rectification of the photoconverter by cooling in nitrogen vapors. Window under the mesa-etching is located on three sides of the diode pad. After annealing the contacts, the metallised substrate is straightened in nitrogen vapors, the epitaxial structure is separated by laser cutting along the metallized rear. After the opening of the optical window, the antireflection coating TiO₂/TiO₂*/Al₂O₃/Al₂O₃*, in which the TiO₂ and Al₂O₃ layers of thickness of 5÷30 nm and 60÷70 nm, respectively, are formed without operation, and the layers of TiO₂* and Al₂O₃* of thickness of 15÷40 nm and 5÷10 nm, respectively, using ion-plasma assisting. Etch the defects of the end surface of the photoconverter with chemical-dynamic etching in a solution of tetramethylammonium hydroxide, hydrogen peroxide and water.

EFFECT: technical result consists in increased electrical parameters, mechanical strength and yield of suitable photoconverters.

1 cl, 2 tbl, 5 dwg