METHOD OF MAKING PHOTOCONVERTER WITH BUILT-IN DIODE Russian patent published in 2018 - IPC H01L31/18 

FIELD: physics.

SUBSTANCE: in the method of manufacturing a photoconverter with a built-in diode, which includes creating a three-stage structure of GaInP/Ga(In)As/Ge of the photo resistive mask with a pattern of personal contacts of the photoconverter and a diode on a germanium substrate with the grown epitaxial layers, etching a diode site, forming the personal contacts of Gr/Ag/Au-Ge/Ag/Au by depositing and exploding, creating a photo resistive mask with the windows for the mesa-isolation of the photoconverter and the built-in diode, etching the mesa, removing the photoresist, depositing the layers of the rear metallization of Gr/Au/Ag/Au, annealing the contacts, opening the optical window by etching, depositing the antireflection coating, disc-cutting the epitaxial structures on the chips, aligning the chips by cooling in nitrogen vapour, after depositing and exploding the personal contacts a photo resistive mask for the mesa-isolation is formed, in the windows of which the areas of the epitaxial structure are protected, opposite the contact sites on the perimeter of the photoconverter with a built-in diode. After mesa etching and remind the photoresist, a photo resistive mask is created that protects the areas for cutting on the rear side of the germanium substrate, furthermore, the photoresist is removed after depositing the rear metallization, after annealing the contacts, the metallic substrate is aligned by cooling in nitrogen vapour, disk-cutting the rear side of the substrate is performed, and the antireflection coating is deposited on the chips after opening the optical window.

EFFECT: improving the electrical insulation of the photoconverter and the diode, increasing the parameters and reliability of the photocell.

6 dwg, 1 tbl