PHOTOCONVERTER MANUFACTURING METHOD Russian patent published in 2020 - IPC H01L31/18 

FIELD: electricity.

SUBSTANCE: invention relates to electrical equipment, in particular, to semiconductor devices, namely to photoconverters. Method of photoconverter manufacturing includes creation on germanium substrate with grown epitaxial layers of three-cascade structure GaInP/GaInAs/Ge photoresistive mask with pattern of face contacts, sputtering of face contacts, removal of photoresist, sputtering of layers of rear metallization, annealing of contacts, spraying of antireflection coating, cutting of structure into size. First, germanium substrate is etched, followed by sputtering face and back contacts with layers of titanium with thickness of 5÷10 nm, gold thickness of 100÷120 nm, silver thickness of 5 + 6 mcm, gold of 200 nm (Ti/Au/Ag/Au). Spraying of the antireflection coating with subsequent stabilization is carried out with oxide layers of Ta₂O₅ with thickness of 55÷65 nm and SiO₂ with thickness of 40÷50 nm. At that, photo transducers are cut to size prior to application of antireflection antireflection coating.

EFFECT: invention shortens the time for manufacturing photoconverters and simplifies the process of creating contacts.

1 cl, 8 dwg