METHOD OF MAKING PHOTOCONVERTER WITH INTEGRATED DIODE Russian patent published in 2014 - IPC H01L31/18 B82B3/00 

FIELD: physics.

SUBSTANCE: invention relates to electrical equipment, particularly to photoconverters. The method of making a photoconverter with an integrated diode involves forming, on a germanium substrate with grown epitaxial layers of a three-stage structure, a photoresist mask with windows under the front contacts of the photoconverter and the integrated diode, etching a diode area, spraying front metal coating layers, removing the photoresist, forming a photoresist mask with windows under the mesa insulation of the photoconverter and the integrated diode, etching the mesa, removing the photoresist, spraying back contact layers, annealing the contacts, opening optical windows by etching, depositing an antireflection coating, cutting from the plate of the photoconverter with the integrated diode; the diode area is etched by drip wetting, and the front metal coating layers are sprayed using a chromium layer with thickness of 5-15 nm, a silver layer with thickness of 5-15 nm, a gold-germanium layer with thickness of 50-80 nm, a silver layer with thickness of 5-6 nm, a gold layer with thickness of 30-80 nm; furthermore, after forming the photoresist mask with windows under the mesa insulation of the photoconverter and the integrated diode, the mesa is etched with simultaneous removal of epitaxial growths on the back surface of the substrate, and a protective coating is then deposited, after which the substrate is etched away, and after moving the protective coating and the photoresist, a back metal coating layer is sprayed.

EFFECT: improved quality of contacts and high output of non-defective devices.

1 tbl