GALLIUM ARSENIDE MONOCRYSTAL GROWING METHOD FOR MANUFACTURING INTEGRATED CIRCUIT SUBSTRATES Russian patent published in 1996 - IPC

FIELD: obtaining of semiconductor materials. SUBSTANCE: method involves conducting process under flux layer ; providing contact between seed and melt in the field with temperature gradient oriented from seed into melt volume, with melt layer thickness being equal to that of circuit substrate; extracting monocrystal into flux before crystallization front reaches tuyere wall; cooling flux to temperature at least equal to flux hardening temperature; extracting crystal from flux. EFFECT: increased efficiency and improved quality of crystal. 10 dwg