PROCESS OF FORMATION OF CIRCUITRY Russian patent published in 1996 - IPC

FIELD: microelectronics. SUBSTANCE: process of formation of circuitry on surface of semiconductor plate with dielectric islets includes sputtering of auxiliary layers of metal, formation of photoresistive mask with circuitry pattern, formation of electric contact in plate, precipitation of gold from electrolyte, removal of photoresist, etching away of auxiliary layers of metal by mask of precipitated gold. In compliance with process semi-insulated gallium arsenide plate is sputtered in sequence with auxiliary layers of vanadium 700-1000 Angstrom, of nickel 100-800 Angstrom, of vanadium 300-800 Angstrom. Upper vanadium layer is removed after photoresistive mask is formed. Electric contact to reverse side of semi-insulating plate is formed in electrolyte solution under illumination. After removal of photoresist auxiliary layers of vanadium are removed by plasma-chemical method and layer of nickel is etched away in solution of sulfuric acid. EFFECT: facilitated manufacture, reduced manufacturing cost.