SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 1996 - IPC

Abstract RU 2061279 C1

FIELD: semiconductor engineering; manufacture of Schottky power transistors with electrochenically built-up gate. SUBSTANCE: barrier and isolating layers of gate are deposited by thermal evaporation. Gate is built up by electrochemical deposition of gold. Evaporated metal layers are removed over mask of deposited gold. Thickness of evaporated layers is chosen in the following range, A: vanadium 700-1200; nickel 300-600; masking vanadium 400-700. EFFECT: facilitated procedure.

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RU 2 061 279 C1

Authors

Samsonenko Boris Nikolaevich

Panasenko Petr Vasil'Evich

Dates

1996-05-27—Published

1993-06-22—Filed