SEMICONDUCTOR DEVICE MANUFACTURING PROCESS Russian patent published in 1995 - IPC

FIELD: manufacture of field-effect transistors. SUBSTANCE: active-layer gallium arsenide plate is coated with SiO₂ layer after formation of photoresist mask, creation of mesa structures by anodic oxidation, anodic oxidation of mesa structures, and removal of photoresist; then photoresist mask is formed with pattern of deposited gate layer from whose ports SiO₂ is removed, photoresist is removed, anodic oxidation of channel is made for SiO₂ mask, SiO₂ is removed by chemical plasma etching, Au-Ge of resistive contacts is deposited on anode oxide mask, anodic oxide is removed. Upon fusing of resistive contacts SiO₂ layer is applied, photoresist mask is formed with pattern of gate deposited layer, SiO₂ in mask ports is removed by chemical plasma etching, photoresist is removed gate is formed by electrochemical deposition of Re-W and Au in succession, then Au-Ge of resistive contacts is deposited by electrochemical procedure in channel region. EFFECT: improved output of serviceable device and quality of their contacts, reduced manufacturing expense due to saving of noble metals. 6 dwg