METHOD OF MANUFACTURE OF SEMICONDUCTOR DEVICES Russian patent published in 1994 - IPC

FIELD: microelectronics. SUBSTANCE: before formation of insulation of active regions ohmic contact are formed by deposition of an Au-Ge layer, thick. Insulation of active regions is formed by creation of a photoresist mask with a pattern of the regions abutting with the transistor channel, and by implantation of ions B⁺. At a cathode-ray lithography the water active conducting layer is used as a screen. The SiO₂ layer applied before the lithography is removed by pin-point plasma-chemical etching to a depth equal to or exceeding 0.1 micron, and after formation of the protective SiO₂ layer implantation of ions B⁺ is performed, the SiO₂ layer, ohmic and gate metallization being used as a mask. The method allows the manufacturing process to be simplified due to retention of the wafer plane surface in the process of manufacture of device and decrease of the thickness of the ohmic contacts. EFFECT: facilitated procedure. 3 dwg