METHOD FOR PROCESSING THE SURFACE OF SILICON PLATES FOR SOLAR BATTERIES Russian patent published in 1996 - IPC

FIELD: production of semiconductor photo transducers. SUBSTANCE: method involves positioning silicon plates in plane 100, heating it in etching reagent that contains caustic alkali, surface active substance and water. Surface active substance concentration C_sas and caustic alkali concentration C_al conform to equation , where G is surface activity of surface active substance in erg cm/gram-molecule, S is total area of plates under processing in cm²; K is experimental factor which equals to 10-60 erg/cm gram-molecule; C_al=52.5 gram-molecule/l. During processing plates are in vertical position and are spaced from one another by d=k₁•C_al+k₂,, where K₁ K₂ are experimental coefficients, which equal to 0.07-0.11 cm l/gram-molecule and 0.02-0.05 cm correspondingly. EFFECT: increased albedo of processed plates, increased reproducibility of manufacturing. 1 tbl