SILICON WAFER SURFACE PASSIVATION BY MAGNETRON SPUTTERING Russian patent published in 2017 - IPC H01L21/20 

FIELD: chemistry.

SUBSTANCE: silicon wafers surface passivation includes cleaning of crystalline silicon wafers, silicon sputtering using a magnetron with a silicon target. Silicon target sputtering is performed in argon (Ar) medium with addition of hydrogen (H₂) or in argon (Ar) medium with addition of organosilicon compounds, or in argon (Ar) medium with addition of hydrogen (H₂) and organosilicon compounds to obtain the passivation layer of hydrogenated amorphous silicon of high quality, to passivate the wafer surface and reduce the surface recombination velocity of charge carriers. At least one chemical reactant selected from the group consisting of silane (SiH₄), Si₂H₆, Si₂H_4, SiF_4, Si₂F₆ and other silicon-containing compounds is used as the organosilicon compound.

EFFECT: invention allows to reduce defects and surface recombination of charge carriers, to increase charge carriers lifetime, to improve quality, technology and safety of the passivation process.

2 cl, 1 dwg