METHOD TO TEXTURE SILICON SURFACES Russian patent published in 2013 - IPC H01L31/18 

Abstract RU 2474008 C2

FIELD: electricity.

SUBSTANCE: method includes stages of plates submersion into an alkaline solution with pH>10, and application of potential difference between the plate and the platinum electrode in the electrolyte in the range from +10 V to +85 V.

EFFECT: method to texture silicon plates according to the invention makes it possible to use alkaline etching solutions, and to produce silicon plates with considerably lower reflecting capacity compared to plates, which are exposed to chemical etching according to processes applied nowadays.

5 cl, 1 tbl, 19 dwg

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RU 2 474 008 C2

Authors

Olef'Erd Ingemar

Lommasson Timoti S.

Dates

2013-01-27Published

2009-03-12Filed