FIELD: physics.
SUBSTANCE: invention relates to solar photoelectric converters based on monocrystalline silicon. Method of producing light-absorbing silicon structure includes application on surface of a monocrystalline silicon sample of layer of vanadium with thickness of 50 nm to 80 nm, heating to temperature (430-440) °C for at least 20 minutes and holding for not less than 40 minutes. Sample is then heated to temperature (630-650) °C for not less than 15 minutes and annealed in an oxygen containing medium for not less than 1 hour. Further, etching is carried out in 40 % aqueous solution of hydrofluoric acid for not less than 1 hour, followed by washing in deionised water and drying.
EFFECT: invention enables to create a light-absorbing structure for a solar photoelectric converter with improved efficiency.
1 cl, 2 dwg, 12 ex
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