SILICON SEMICONDUCTOR PLATE OF NEW TYPE AND PROCESS OF ITS MANUFACTURE Russian patent published in 1999 - IPC

FIELD: microelectronics, production of solar cells. SUBSTANCE: it is proposed to manufacture silicon semiconductor plate from three monocrystalline regions developed one relative to another that form three circular sectors of semiconductor plate bordering on surface which lines so pass radially with regard to each other and form angle W6, W7, W8 that is less than 180 deg. In this case two of bordering surfaces are borders of twin grains of first order between correspondingly two <111> planes of crystal. EFFECT: enhanced economical method of manufacture of solar cells with high efficiency index. 13 cl, 10 dwg