BACK-CONTACTING SOLAR CELL AND MANUFACTURING SUCH ELEMENT Russian patent published in 2024 - IPC H01L31/224 H01L31/18 

Abstract RU 2815034 C1

FIELD: solar power.

SUBSTANCE: back-contacting solar cell (10), according to the invention, includes semiconductor substrate (12) of a silicon wafer including front side (16) and back side (14), wherein the back side is provided with electrodes (36) of the first polarity and electrodes (38) of the second polarity, wherein electrodes (36) of the first polarity are located on highly doped silicon layer (20) of the first polarity, highly doped silicon layer (20) is located on a semiconductor substrate on first passivation layer (18), and electrodes (38) of the second polarity are in direct contact electrically and mechanically with semiconductor substrate (12) through highly doped base regions (30) of the second polarity of semiconductor substrate (12).

EFFECT: design and manufacturing technology for a solar cell with contacts on the back side while maintaining a high efficiency, while simplifying the solar cell manufacturing technology and reducing its cost.

13 cl, 2 dwg

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RU 2 815 034 C1

Authors

Hoffmann Erik

Dates

2024-03-11Published

2021-12-03Filed