METHOD OF GROWING CRYSTALS FROM MELT Russian patent published in 2002 - IPC

FIELD: methods of growing crystals from melts by oriented crystallization in closed container; growing monocrystals under microgravitation conditions through control of convective flows in melt. SUBSTANCE: proposed method consists in forming thermal field on outer wall of closed container which satisfies the following condition: T(ϕ,t,z) = δTcos(ωt+nz+kϕ)+Az, where T(K) is temperature read off average temperature T₀(K),, δT(K) is amplitude of heat wave; t (s) is time of process; ϕ(rad, Z (m) are polar coordinates; ω(rad.s^-1 ) is circular frequency of heat wave; n(rad.m^-1), k are wave number; A(K•m^-1) is axial temperature gradient use is made of multi-section members which are inclined relative to longitudinal axis of container. EFFECT: enhanced efficiency. 4 dwg